Jeol JBX9300 electron beam lithography tool allows direct writing of patterns on the resist layer using gaussian beam
Technical Specifications
- Possible work with 50, 75, 100, 150, 200 mm wafers, and masks for 100 mm and 150 mm wafers
- Accelerating voltage 50 or 100 kV
- The minimum diameter of used beam spot used does not exceed 5 nm, and the minimum width of the obtained line is below 20 nm
- Maximum exposure field sizes without stitching is 1 mm2
Application
- Direct writing of patterns in nanoscale
- Masks production for photolithography
- Testing and prototyping of patterns with high flexibility, useful especially in the phase of research